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inchange semiconductor product specification silicon pnp power transistors 2N5867 2n5868 description ? with to-3 package ? low collector saturation voltage applications ? for medium-speed switching and amplifier applications pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit 2N5867 -60 v cbo collector-base voltage 2n5868 open emitter -80 v 2N5867 -60 v ceo collector-emitter voltage 2n5868 open base -80 v v ebo emitter-base voltage open collector -5 v i c collector current -5 a p d total power dissipation t c =25 ?? 87.5 w t j junction temperature 150 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.17 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors 2N5867 2n5868 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2N5867 -60 v ceo(sus) collector-emitter sustaining voltage 2n5868 i c =-0.1a ;i b =0 -80 v v cesat collector-emitter saturation voltage i c =-5a;i b =-1a -1.0 v v besat base-emitter saturation voltage i c =-5a; i b =-1a -1.5 v i cbo collector cut-off current v cb =ratedv cbo ; i b =0 -1.0 ma 2N5867 v ce =-30v; i b =0 i ceo collector cut-off current 2n5868 v ce =-40v; i b =0 -2.0 ma i ebo emitter cut-off current v eb =-5v; i c =0 -1.0 ma h fe dc current gain i c =-1.5a ; v ce =-4v 20 100 f t trainsistion frequency i c =-0.5a ; v ce =-10v;f=1mhz 4 mhz
inchange semiconductor product specification 3 silicon pnp power transistors 2N5867 2n5868 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10mm)

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